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? IRGP4063D1PBF irgp4063d1-epbf 1 www.irf.com ? 2013 international rectifier june 24, 2013 v ces = 600v i c = 60a, t c =100c t sc ?? 5s, t j(max) = 175c v ce(on) typ. = 1.65v @ i c = 48a g c e gate collector emitter e g n-channel c base part number package type standard pack orderable part number form quantity IRGP4063D1PBF to-247ac tube 25 IRGP4063D1PBF irgp4063d1-epbf to-247ad tube 25 irgp4063d1-epbf parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 100 i c @ t c = 100c continuous collector current 60 i cm pulse collector current, v ge = 15v 200 a i lm clamped inductive load current, v ge = 20v ? 192 i f @ t c = 25c diode continous forward current 30 i f @ t c = 100c diode continous forward current 15 i fm diode maximum forward current ? 120 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 330 w p d @ t c = 100c maximum power dissipation 170 t j operating junction and -40 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? g g e c g g c e IRGP4063D1PBF ? ? irgp4063d1 \ epbf ? ? insulated gate bipolar transistor with ultrafast soft recovery diode thermal resistance ?? ? parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? CCC CCC 0.45 r ? jc (diode) thermal resistance junction-to-case-(each diode) ? CCC CCC 2.4 r ? cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ? ja thermal resistance, junction-to-ambient (typical socket mount) CCC CCC 40 c/w absolute maximum ratings applica ons ? ? industrial ? motor ? drive ? ? inverters ? ? ups ?? ? welding ? features benefits low v ce(on) and switching losses high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability positive v ce (on) temperature coefficient excellent cu rrent sharing in parallel operation 5s short circuit soa enables short circuit protection scheme lead-free, rohs compliant environmentally friendly downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 2 www.irf.com ? 2013 international rectifier june 24, 2013 electrical characteristics @ t j = 25c (unless otherwise specified) ? parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 100a ?? ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0.3 v/c v ge =0v, i c =1ma (25c-175c) v ce(on) ? collector-to-emitter saturation voltage ? 1.65 2.14 v i c = 48a, v ge = 15v, t j = 25c 2.05 i c = 48a,v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 6.5 v v ce = v ge , i c = 1.4ma ? v ge(th) / ? tj threshold voltage temp. coefficient -21 mv/c v ce =v ge , i c =1.4ma (25c-175c) gfe forward transconductance 32 s v ce = 50v, i c = 48a, pw = 20s i ces collector-to-emitter leakage current 1.0 200 v ge = 0v, v ce = 600v 850 v ge = 0v, v ce = 600v,t j = 175c v fm diode forward voltage drop 1.9 2.4 v i f = 8a 1.2 i f = 8a, t j = 175c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) ? parameter min. typ. max. ? units conditions q g total gate charge (turn-on) 100 150 nc i c = 48a q ge gate-to-emitter charge (turn-on) 25 40 v ge = 15v q gc gate-to-collector charge (turn-on) 40 60 v cc = 400v e on turn-on switching loss 1.4 2.3 mj i c = 48a, v cc = 400v, v ge = 15v r g = 10 ? , l = 485h, t j = 25c energy losses include tail & diode reverse recovery ?? e off turn-off switching loss 1.1 2.0 e total total switching loss 2.5 4.3 t d(on) turn-on delay time 60 80 t r rise time 50 70 ns t d(off) turn-off delay time 160 185 t f fall time 30 50 e on turn-on switching loss 2.0 i c = 48a, v cc = 400v, v ge =15v r g =10 ? , l= 485h, t j = 175c energy losses include tail & diode reverse recovery ?? e off turn-off switching loss 1.5 mj e total total switching loss 3.5 t d(on) turn-on delay time 50 t r rise time 55 ns t d(off) turn-off delay time 165 t f fall time 55 c ies input capacitance 2900 v ge = 0v c oes output capacitance 200 pf v cc = 30v c res reverse transfer capacitance 90 f = 1.0mhz rbsoa reverse bi as safe operating area t j = 175c, i c = 192a full square v cc = 480v, vp 600v rg = 50 ? , v ge = +20v to 0v scsoa short circuit safe operati ng area 5 s v cc = 400v, vp 600v rg = 50 ? , v ge = +15v to 0v erec reverse recovery energy of the diode 245 j t j = 175c t rr diode reverse recovery time 80 ns v cc = 400v, i f = 48a i rr peak reverse recovery current 20 a v ge = 15v, rg = 10 ? , l = 485h a ? notes: ?? v cc = 80% (v ces ), v ge = 20v, l = 50h, r g = 50 ? . ?? r ? is measured at t j of approximately 90c. ?? refer to an-1086 for guidelines for measuring v (br)ces safely. ?? maximum limits are based on statistical sample size characterization. ?? pulse width limited by max. junction temperature. ?? values influenced by parasitic l and c in measurement. downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 3 www.irf.com ? 2013 international rectifier june 24, 2013 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 5 - reverse bias soa t j = 175c; v ge = 20v 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) fig. 3 - power dissipation vs. case temperature 0.1 1 10 100 f , frequency ( khz ) 20 40 60 80 100 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tcase = 100c gate drive as specified power dissipation = 167w fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) i square wave: v cc diode as specified 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 120 i c ( a ) fig. 2 - maximum dc collector current vs. 1 10 100 1000 v ce , collector-to-emitter voltage (v) 0.01 0.1 1 10 100 1000 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by v ce (on) 100sec dc fig. 4 - forward soa t c = 25c, t j @ 175c; v ge =15v downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 4 www.irf.com ? 2013 international rectifier june 24, 2013 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v f (v) 0 50 100 150 200 i f ( a ) t j =175c t j = 25c tj = -40c 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20s fig. 10 - typical v ce vs. v ge t j = -40c 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a fig. 9 - typ. diode forward characteristics tp = 20s fig. 111 - typical v ce vs. v ge t j = 25c downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 5 www.irf.com ? 2013 international rectifier june 24, 2013 6 8 10 12 14 16 v ge, gate-to-emitter voltage (v) 0 50 100 150 200 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 0 20 40 60 80 100 120 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s fig. 15 - typ. switching time vs. ic tj = 175c; l = 485h; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 16 - typ. energy loss vs. r g t j = 175c; l = 485h; v ce = 400v, i ce = 48a; v ge = 15v 0 20 40 60 80 100 120 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 17 - typ. switching time vs. r g t j = 175c; l = 485h; v ce = 400v, i ce = 48a; v ge = 15v 0 20 40 60 80 100 120 i c (a) 0 1 2 3 4 5 6 7 e n e r g y ( m j ) e off e on fig. 14 - typ. energy loss vs. i c t j = 175c; l = 485h; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 12 - typical v ce vs. v ge t j = 175c 0 20 40 60 80 100 120 r g ( ? ) 1 2 3 4 5 6 e n e r g y ( m j ) e off e on downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 6 www.irf.com ? 2013 international rectifier june 24, 2013 20 30 40 50 60 70 80 90 100 i f (a) 10 12 14 16 18 20 22 24 26 i r r ( a ) r g = 22 ? r g = 47 ? r g = 10 ? r g = 100 ? 0 20 40 60 80 100 120 r g ( ? ) 10 12 14 16 18 20 22 i r r ( a ) 300 400 500 600 700 800 900 1000 1100 di f /dt (a/s) 12 14 16 18 20 22 i r r ( a ) fig. 18 - typ. diode i rr vs. i f t j = 175c fig. 20 - typ. diode i rr vs. dif/dt v cc = 400v; v ge = 15v; i f = 48a; t j = 175c 200 400 600 800 1000 1200 di f /dt (a/s) 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 q r r ( n c ) ??? ??? ???? ??? 48a 24a 96a fig. 19 - typ. diode i rr vs. r g t j = 175c fig. 21 - typ. diode q rr vs. dif/dt v cc = 400v; v ge = 15v; t j = 175c 0 20 40 60 80 100 120 i f (a) 0 50 100 150 200 250 300 e n e r g y ( j ) r g =10 ? r g = 22 ? r g = 47 ? r g = 100 ? fig. 22 - typ. diode e rr vs. i f t j = 175c 8 1 01 21 41 61 8 v ge (v) 0 4 8 12 16 20 t i m e ( s ) 0 200 400 600 800 1000 c u r r e n t ( a ) t sc i sc fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 25c downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 7 www.irf.com ? 2013 international rectifier june 24, 2013 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 20 40 60 80 100 120 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 18 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig 27. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 25 - typical gate charge vs. v ge i ce = 48a ri (c/w) ? i (sec) ? 0.0120 0.000012 0.1158 0.00013 0.1820 0.00379 0.1399 0.02387 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 fig 28. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? i (sec) ? 0.1343 0.00009 0.7058 0.00032 1.0181 0.00327 0.5434 0.03079 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 8 www.irf.com ? 2013 international rectifier june 24, 2013 l rg 80 v dut vcc + - g force c sense 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.6 - bvces filter circuit l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit dc 4x dut vcc r sh fig.c.t.3 - s.c. soa circuit downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 9 www.irf.com ? 2013 international rectifier june 24, 2013 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 -200 0 200 400 600 800 1000 1200 -100 0 100 200 300 400 500 600 - 1012345 ice (a) vce (v) time (us) v ce i ce -30 -15 0 15 30 45 60 -1.50 -0.50 0.50 1.50 2.50 3.50 i f (a) time (s) peak i rr t rr q rr 10% peak irr -20 0 20 40 60 80 100 120 140 -100 0 100 200 300 400 500 600 700 - 2- 1012345 i ce (a) v ce (v) time(s) 90% i ce 5% v ce 5% i ce eoff loss tf -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -3 -2 -1 0 1 2 3 4 i ce (a) v ce (v) time (s) test current 90% i ce 5% v ce 10% i ce t r eon loss downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 10 www.irf.com ? 2013 international rectifier june 24, 2013 to-247ac package outline dimensions are shown in millimeters (inches) 2x c "a" "a" e e2/ 2 q e2 2x l1 l d a e 2x b2 3x b lead tip see vi ew "b" b4 b a ? . 010 b a a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a vi ew : "b" section: c- c, d-d, e-e (b, b2, b4) (c) base meta l plati ng vi ew : "a" - "a" year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application. downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 11 www.irf.com ? 2013 international rectifier june 24, 2013 to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application. assem bly year 0 = 2000 assem bled o n w w 35, 2000 in th e assem bly lin e "h " exam ple: this is an irg p30b120kd-e lo t co de 5657 with assem bly part n um ber date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lo t c o d e n ote: "p" in assem bly line position indicates "lead-free" downloaded from: http:///
? IRGP4063D1PBF/irgp4063d1-epbf 12 www.irf.com ? 2013 international rectifier june 24, 2013 qualification information ? qualification level industrial (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a to-247ad rohs compliant yes data and specifications subject to change without notice. ir world headquarters: 101n sepulveda., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . ? qualification standards can be found at international rectifiers web site: h ttp://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. downloaded from: http:///

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